Ultra-stabilis Superficies Mount PAR® Transiens Voltage Suppressores (TVS) DO-218AB SM8S
commoda DO-218AB SM8S;
1. Ob technologiam methodi chemica Etching, eventus negativi mediarum sectionis directae removentur.
2. Validus in contrario fluctu propter maiorem chip quam versos.
3. Maxime humilis defectum rate in diversis tempestatibus et locis
4. Approbata per vexillum AEC-Q101
5. Munera Diodis optimized sunt, e praesidio scientifico in PN coniunctas prosunt.
PRIMIGENIAE CARACTERES.
VBR: 11.1 V ad 52.8 V
VWM: 10 V ad 43 V
PPPM (10 x 1000 μs): 6600 W
PPPM (10 x 10 000 μs): 5200 W
PD: 8 W
IFSM: 700 A
TJ max.: 175 °C
Verticitas: Uni-directional
Sarcina: DO-218AB
Procedendi Chip productionis
Lorem Typographia 1..Ultra exactum automatic laganum printing
2. Lorem Primum-etching.Lorem Etching Equipment,CPK>1.67)
3. Lorem Polarity Test(Precise Polarity Test)
4. Lorem Conventus Se developed Lorem Ipsum Conventum
5. Solding (Praesidium cum mixtione Nitrogenii & Hydrogenii
Vacuum Soldering .
6. Automatic Secunda-etching (Automatic Second-etching with Ultra-pura Water)
7. Automatic Gluing (Uniformes Gluing & Precise Calculus cognoscuntur Automatici Gluing Equipment)
8. Automatic Thermal Test (Automatic Selection by Thermal Tester)
Lorem Test (Multifunctional TEGUMENTUM)